JPH046089B2 - - Google Patents

Info

Publication number
JPH046089B2
JPH046089B2 JP58171382A JP17138283A JPH046089B2 JP H046089 B2 JPH046089 B2 JP H046089B2 JP 58171382 A JP58171382 A JP 58171382A JP 17138283 A JP17138283 A JP 17138283A JP H046089 B2 JPH046089 B2 JP H046089B2
Authority
JP
Japan
Prior art keywords
gaas
film
based compound
compound semiconductor
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58171382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6064430A (ja
Inventor
Toshio Nonaka
Hiroshi Nakamura
Nagayasu Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58171382A priority Critical patent/JPS6064430A/ja
Priority to US06/602,578 priority patent/US4540446A/en
Publication of JPS6064430A publication Critical patent/JPS6064430A/ja
Publication of JPH046089B2 publication Critical patent/JPH046089B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58171382A 1983-09-19 1983-09-19 ＧａＡｓ系化合物半導体装置の製造方法 Granted JPS6064430A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58171382A JPS6064430A (ja) 1983-09-19 1983-09-19 ＧａＡｓ系化合物半導体装置の製造方法
US06/602,578 US4540446A (en) 1983-09-19 1984-04-20 Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58171382A JPS6064430A (ja) 1983-09-19 1983-09-19 ＧａＡｓ系化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6064430A JPS6064430A (ja) 1985-04-13
JPH046089B2 true JPH046089B2 (en]) 1992-02-04

Family

ID=15922140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58171382A Granted JPS6064430A (ja) 1983-09-19 1983-09-19 ＧａＡｓ系化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6064430A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666454B2 (ja) * 1985-04-23 1994-08-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション ▲ｉｉｉ▼―▲ｖ▼族半導体デバイス
JPS62205622A (ja) * 1986-03-06 1987-09-10 Agency Of Ind Science & Technol オ−ミツク接触の形成方法
US4983653A (en) * 1986-11-12 1991-01-08 Diafoil Company, Ltd. Polyester shrinkable film containing benzotriazole
EP0267799B1 (en) * 1986-11-12 1993-08-18 Diafoil Hoechst Co., Ltd Shrinkable polyester film
JPH0750781B2 (ja) * 1987-03-18 1995-05-31 富士通株式会社 化合物半導体集積回路装置

Also Published As

Publication number Publication date
JPS6064430A (ja) 1985-04-13

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